Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device

摘要

A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

主权项

1. A method of forming a thin film, the method comprising:
forming a preliminary thin film including a metal oxynitride on a substrate; and treating the preliminary thin film with inert gas ions to form the thin film having stabilized properties, the thin film being a semiconductor film, wherein
the treating of the preliminary thin film with the inert gas ions includes performing a sputtering process, the sputtering process including using an acceleration voltage of about 0.5 keV to about 4.0 keV.