Structures, devices and methods for memory devices

摘要

Structures, devices and methods are provided for fabricating memory devices. A structure includes: a first conductive line disposed in a first conductive layer; a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer; and a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer. The second conductive layer and the third conductive layer are different from the first conductive layer.

主权项

1. A static random access memory (SRAM) device comprising:
first, second, and third conductive layers; a first word line disposed in the first conductive layer; a first landing pad disposed in the first conductive layer; a second word line disposed in the second conductive layer and coupled to the first landing pad; a second landing pad disposed in the first conductive layer; a third word line disposed in the third conductive layer and coupled to the second landing pad; and an SRAM cell coupled to the first word line and the first and second landing pads, wherein at least two of the second conductive layer, the third conductive layer, and the first conductive layer are disposed one above the other.