发明名称 Low-cost low-profile solder bump process for enabling ultra-thin wafer-level packaging (WLP) packages
摘要 Techniques are described herein for a dip soldering process which provides a low-profile, low-cost solder bump formation process which may be implemented to promote package thickness scaling (e.g., reduce the overall package thickness). For example, the dip soldering process disclosed herein may enable ultra-thin wafer-level packages (WLP), ultra-thin wafer level quad-flat no-leads (WQFN) packages, or the like.
申请公布号 US9425064(B2) 申请公布日期 2016.08.23
申请号 US201213718130 申请日期 2012.12.18
申请人 Maxim Integrated Products, Inc. 发明人 Thambidurai Karthik;Khandekar Viren;Zhou Tiao
分类号 H01L21/48;H01L23/488;H01L23/00 主分类号 H01L21/48
代理机构 Advent, LLP 代理人 Advent, LLP
主权项 1. A process comprising: positioning a plurality of semiconductor wafers over a receptacle, the plurality of semiconductor wafers disposed within a holder configured to hold the plurality of semiconductor wafers in a vertically oriented configuration, the receptacle containing liquid solder, wherein a flux is disposed over the receptacle, each semiconductor wafer of the plurality of semiconductor wafers further comprising silicon; prior to transitioning the plurality of semiconductor wafers through the flux and a solder bath, pre-heating respective semiconductor wafers of the plurality of semiconductor wafers to a temperature that is twenty to thirty degrees Celsius below a melting point of the liquid solder to minimize breakage of the respective semiconductor wafers of the plurality of semiconductor wafers; transitioning the plurality of semiconductor wafers through the flux to apply the flux to an underbump metallurgy of respective semiconductor wafers of the plurality of semiconductor wafers; transitioning the plurality of semiconductor wafers into the solder bath; placing the plurality of semiconductor wafers into the receptacle to coat the underbump metallurgy with the liquid solder; and removing the plurality of semiconductor wafers from the receptacle to allow the liquid solder coated on the underbump metallurgy to solidify and form a solder bump on the underbump metallurgy of the plurality of semiconductor wafers.
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