| 发明名称 |
NONPARALLEL ISLAND ETCHING |
| 摘要 |
Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face. |
| 申请公布号 |
US2016244885(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201315033015 |
申请日期 |
2013.10.30 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
McKay Roger A.;Sadik Patrick W. |
| 分类号 |
C23F1/16 |
主分类号 |
C23F1/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming etching islands on a first face of a substrate and on a second face of the substrate nonparallel to the first face; and concurrently exposing the first face and the second face of the substrate to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face. |
| 地址 |
Houston TX US |
