MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a reliable semiconductor device including an oxide semiconductor and having the stable electric characteristics.SOLUTION: A manufacturing method for a semiconductor device includes: forming a gate electrode; forming a first insulating film on the gate electrode; supplying halogen atoms to the first insulating film by performing a halogen doping process on the first insulating film; forming an oxide semiconductor film overlapping with the gate electrode on the first insulating film; heating the oxide semiconductor film to remove hydrogen atoms from the oxide semiconductor film; supplying oxygen atoms to the oxide semiconductor film by performing an oxygen doping process to the oxide semiconductor film from which the hydrogen atoms have been removed; heating the oxide semiconductor film to which the oxygen atoms have been supplied; forming a source electrode and a drain electrode on and in contact with the oxide semiconductor film; and forming a second insulating film.SELECTED DRAWING: Figure 2