Diffusion-controlled semiconductor contact creation

摘要

A contact can be formed by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material that exposes the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film having a first and second type of metal and a second metal film. The metal stack and the silicon-containing region of the semiconductor substrate are annealed to form a silicide that includes the first and second types of metal and that is in contact with the semiconductor substrate. A first liner is formed within the opening and a fill metal is deposited in the opening.

主权项

1. A method of forming a contact, the method comprising:
forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate; creating an opening through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region; forming a metal stack within the opening, the metal stack including at least a first metal film that includes a first type of metal and a second type of metal and a second metal film; annealing the metal stack and the silicon-containing region of the semiconductor substrate to form a silicide that includes the first and second types of metal and that is in contact with the semiconductor substrate; forming a first liner within the opening subsequent to forming the metal stack within the opening, wherein the first liner is in direct contact with sidewalls of the layer of dielectric material; and depositing a fill metal in the opening.