Method of producing a semiconductor laser element, and semiconductor laser element

摘要

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

主权项

1. A method of producing a plurality of semiconductor laser elements comprising:
A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing a wafer comprising a plurality of laser bars having a multiplicity of semiconductor laser diodes which comprise a common growth substrate and a semiconductor layer sequence grown thereon, wherein strip-shaped metallizations for contact locations of the semiconductor laser elements are provided at a top side of the semiconductor layer sequence, holes are introduced into the wafer, said holes being situated in each case between adjacent contact locations and penetrating through the common growth substrate and the semiconductor layer sequence completely, and wherein two adjacent semiconductor laser diodes share one of the holes, D) fitting the wafer on a top side of the carrier assemblage, wherein the top side of the carrier assemblage is provided with a further metallization, said further metallization not being covered by the semiconductor laser diodes in places and forming further contact locations, wherein the semiconductor laser elements are electrically connectable via the contact locations and the further contact locations, and E) singulating to form the semiconductor laser elements after D).