| 发明名称 |
METHODS FOR FORMING COBALT INTERCONNECTS |
| 摘要 |
A method for depositing metal in a feature on a workpiece includes forming a seed layer in a feature on a workpiece, wherein the seed layer includes a metal selected from the group consisting of cobalt and nickel; electrochemically depositing a first metallization layer on the seed layer, wherein electrochemically depositing the metallization layer includes using a plating electrolyte having a plating metal ion and a pH in the range of 6 to 13; and heat treating the workpiece after deposition of the first metallization layer. |
| 申请公布号 |
US2016309596(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201514687755 |
申请日期 |
2015.04.15 |
| 申请人 |
APPLIED Materials, Inc. |
发明人 |
Shaviv Roey;Lam John W.;Bochman Timothy;Tseng Jennifer Meng Chu |
| 分类号 |
H05K3/18;C25D5/34;C21D1/26;C25D3/12;C22F1/10;C21D9/00;C25D7/12;C25D5/50 |
主分类号 |
H05K3/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for depositing metal in a feature on a workpiece, the method comprising:
(a) forming a seed layer in a feature on a workpiece, wherein the seed layer includes a metal selected from the group consisting of cobalt and nickel; (b) electrochemically depositing a first metallization layer on the seed layer, wherein electrochemically depositing the metallization layer includes using a plating electrolyte having a plating metal ion and a pH in the range of 6 to 13; and (c) heat treating the workpiece after deposition of the first metallization layer. |
| 地址 |
Santa Clara CA US |
