Bidirectional Bipolar Transistor Structure with Field-Limiting Rings Formed by the Emitter Diffusion

摘要

A symmetrically-bidirectional power bipolar transistor having, on both surfaces of a semiconductor die, an n-type emitter/collector region which is completely surrounded by a first recessed field plate, which is itself completely surrounded by a p-type region including p+ contact areas. All of the p-type region is preferably bordered and surrounded by a second recessed field plate trench. The second recessed field plate trench is itself surrounded by an n-type region which is wholly or partially made of the same diffusion as the emitter/collector regions, but which is not connected to the metallization which connects the emitter/collector regions to extermal terminals.

主权项

1. A symmetrically-bidirectional power bipolar transistor device, comprising:
a semiconductor die having, on both surfaces thereof, a first-conductivity-type emitter/collector region; two current-carrying metallizations, on the two surfaces of the die, which separately connect the two emitter/collector regions to respective external current-carrying terminals, but not to each other; a second-conductivity-type base contact region, including heavily-doped second-conductivity-type contact areas, in proximity to the emitter/collector region; two additional metallizations, on the two surfaces of the die, which separately connect the two base contact regions to respective additional external terminals, but not to each other; one or more first-conductivity-type field-limiting rings, which in combination completely surround the emitter/collector and base contact regions; wherein each of the first-conductivity-type field-limiting rings comprises the same dopant components as the emitter/collector regions, and is not laterally continuous with any of the emitter/collector regions.