HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

A heterojunction bipolar transistor, comprising an elongated base mesa, an “H” shaped emitter, two base electrodes, an elongated collector, and two elongated collector electrodes. The “H” shaped emitter is formed on the base mesa and has two recesses respectively on two opposite sides of the “H” shape, and the emitter has two elongated emitter electrodes formed on the “H” shaped emitter. The two base electrodes are formed on the base mesa respectively at the two recesses of the “H” shaped emitter, and each of the base electrodes has a base via hole at or near the center of the base mesa. The elongated collector is formed below the base mesa. The two elongated collector electrodes are formed on the collector respectively at two opposite sides of the base mesa.

主权项

1. A heterojunction bipolar transistor, comprising:
an elongated base mesa having a long axis and a short axis; an “H” shaped emitter formed on the base mesa, the “H” shaped emitter having two recesses respectively on two opposite sides of the “H” shape, and the emitter having two elongated emitter electrodes formed on the “H” shaped emitter; two base electrodes formed on the base mesa respectively at the two recesses of the “H” shaped emitter, and each of the base electrodes having a base via hole at or near the center of the base mesa; an elongated collector formed below the base mesa; and two elongated collector electrodes formed on the collector respectively at two opposite sides of the base mesa along the long axis of the base mesa.