| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a pillar-shaped resistance-changing layer and a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer. A reset gate surrounds the reset gate insulating film, and the reset gate is electrically insulated from the pillar-shaped resistance-changing layer. |
| 申请公布号 |
US2016322425(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615183372 |
申请日期 |
2016.06.15 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a pillar-shaped resistance-changing layer; a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and a reset gate that surrounds the reset gate insulating film, wherein the reset gate is electrically insulated from the pillar-shaped resistance-changing layer. |
| 地址 |
Singapore SG |
