| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that enables a high-speed operation, and to provide a highly-reliable semiconductor device.SOLUTION: An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed on the semiconductor layer. The formation of the source region and the drain region is performed on the semiconductor layer by the ion doping method or the ion implantation method of one or a plurality of kinds of elements among rare gases and hydrogen, by using a channel protection layer as a mask.SELECTED DRAWING: Figure 7 |
