| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum cascade semiconductor laser having a structure capable of easily forming a high mesa waveguide desired by a quantum cascade laser and increasing the flatness of an element surface.SOLUTION: A quantum cascade semiconductor laser 1 includes a semiconductor region 13 provided on a third region 11d and including a mesa waveguide 17, and an upper electrode 15 provided on the semiconductor region 13 and connected to the mesa waveguide 17. The semiconductor region 13 comprises a first embedded region 19 provided on a first side surface 17b and a first region 11b, and a second embedded region 21 provided on a second side surface 17c and a second region 11c. The first embedded region 19 and the second embedded region 21 include laminate regions 37 and bulk semiconductor regions 39. The laminate regions 37 are arranged on the first region 11b and the second region 11c so as to be separated from each other. The laminate regions 37 and the mesa waveguide 17 include a semiconductor laminate structure 23. The semiconductor laminate structure 23 includes a first semiconductor layer for a core layer and a second semiconductor layer for an upper clad layer.SELECTED DRAWING: Figure 2 |
