Method for fabricating fin field effect transistor and semiconductor device

摘要

A method for fabricating a fin field effect transistor (FinFET) is provided. The method includes steps as follows. A gate stack is formed over a substrate having a semiconductor fin. Recesses are formed in the semiconductor fin beside the gate stack. A pre-clean process is performed to remove native oxides on surfaces of the recesses. After the pre-clean process, a selectivity proximity push process is performed using a fluorine-containing gas and a first hydrogen gas to the recesses. Strained layers are formed in the recesses.

主权项

1. A method for fabricating a fin field effect transistor (FinFET), comprising:
forming a gate stack over a substrate having a semiconductor fin; forming recesses in the semiconductor fin beside the gate stack; performing a pre-clean process to remove native oxides on surfaces of the recesses; after the pre-clean process, performing a selectivity proximity push process using a fluorine-containing gas and a first hydrogen gas to the recesses; and forming strained layers in the recesses.