发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
The region having the surface roughness has nitrogen vacancies, which serve as compensating donors for acceptors and therefore cannot achieve a sufficiently high p-type carrier concentration. In addition, the surface of the GaN-based material may be contaminated as a result of diffusion of impurities from the protective film or insufficient removal of the protective film. Such contamination may adversely affect the subsequent steps or the characteristics of completed devices.;A first aspect of the innovations herein provides a method of manufacturing a nitride semiconductor device, including thermally treating a nitride semiconductor layer or removing a film formed on a front surface of the nitride semiconductor layer, and polishing the front surface of the nitride semiconductor layer after the thermally treating or the removing. |
申请公布号 |
US2016365438(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201615060597 |
申请日期 |
2016.03.03 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
TAKASHIMA Shinya;TANAKA Ryo;UENO Katsunori;EDO Masaharu |
分类号 |
H01L29/78;H01L21/306;H01L29/66;H01L29/207;H01L29/10;H01L21/324;H01L29/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a nitride semiconductor device, comprising:
thermally treating a nitride semiconductor layer or removing a film formed on a front surface of the nitride semiconductor layer; and polishing the front surface of the nitride semiconductor layer after the thermally treating or the removing. |
地址 |
Kanagawa JP |