发明名称 PHOTOLITHOGRAPHY METHOD FOR THIN FILM AND METHOD FOR MANUFACTURING SUBSTRATE OF THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY USING THE SAME
摘要 PURPOSE: A method for manufacturing a substrate of a TFT(Thin Film Transistor) for a LCD(Liquid Crystal Display) is provided to simplify a manufacturing process, by patterning a layer without an etch process, and by using the layer to pattern as an etch blocking layer for patterning a lower layer of the layer to pattern. CONSTITUTION: A gate interconnection including a gate line/a gate electrode of a screen display area and a gate pad of a peripheral area, is formed on a substrate including the screen display area and the peripheral area. A gate insulating layer, a semiconductor layer, a contact layer and a conductive layer are consecutively evaporated on the gate interconnection. A data interconnection and a contact layer pattern under the data interconnection including a data line, a source/drain electrode and a data pad are formed by etching the conductive layer and contact layer. A passivation layer composed of a photo-resistive organic insulating material is stacked. The passivation layer is exposed by using a first and a second optical masks having different light transmission rates. The passivation layer is developed to form another passivation layer having a different thickness. A passivation layer pattern and a semiconductor layer pattern are formed by patterning the passivation layer and semiconductor layer under the passivation layer of the screen display area while the passivation layer, semiconductor layer and gate insulating layer of the peripheral area are patterned to form a first contact window exposing the gate pad. A pixel electrode is electrically connected to a drain electrode.
申请公布号 KR20000073181(A) 申请公布日期 2000.12.05
申请号 KR19990016315 申请日期 1999.05.07
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 JUNG, CHANG O
分类号 H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/786
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