发明名称 |
Magnetoresistive sensor for high temperature environment using iridium manganese |
摘要 |
A magnetoresistive read sensor fabricated on a substrate includes a ferromagnetic layer that is exchange coupled with an antiferromagnetic layer made of a defined composition of iridium manganese. A tantalum layer is used so that the exchange field and coercivity do not change with variations in annealing temperature. The antiferromagnetic layer is formed with a material composition of Irx Mn100-x, wherein x is in the range of 15<x>23. In an embodiment of a spin valve structure, the tantalum layer is disposed over the substrate and the antiferromagnetic layer is in direct contact with a pinned ferromagnetic layer. In another embodiment, the IrMn layer is formed over a soft active layer. In a third embodiment using exchange pinning, spaced IrMn regions are formed over the active magnetoresistive layer to define the sensor track width.
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申请公布号 |
US6166891(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19970885283 |
申请日期 |
1997.06.30 |
申请人 |
READ-RITE CORPORATION |
发明人 |
LEDERMAN, MARCOS M.;NEPELA, DANIEL A.;TONG, HUA-CHING |
分类号 |
G11B5/39;G01R33/09;(IPC1-7):G11B5/127 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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