| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for slicing single crystal of silicon capable of providing a silicon wafer which can reduce generation of cracking and chipping during the slicing, and reduce not only tear drop suspected during the epitaxial growth and micro-roughness of an epitaxial growth surface. SOLUTION: When slicing a silicon single crystal ingot by using, for example, a wire saw, the relationship between the angle of inclination and the direction of cleavage of the wafer sliced from the silicon single crystal ingot is set in a specified range by slightly deviating the direction of cleavage of a semiconductor single crystal ingot, the wire feeding direction and the ingot feeding direction from each other, but not agreeing them with each other to reduce generation of cracking and chipping defects, and tear drop and micro-roughness. |
