SAMPLE CORRECTING APPARATUS, SAMPLE CORRECTION METHOD, AND DEVICE MANUFACTURING METHOD USING THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a sample correcting apparatus and a sample correction method by which the edge roughness of a corrected pattern can be decreased and the sample can be corrected by electron beam assist etching or electron beam assist deposition, and to provide a device manufacturing method using the above method.

SOLUTION: The sample correction method includes steps of: (a) irradiating a sample with electron beams converged by an objective lens; (b) supplying a reactive gas onto the surface of the sample irradiated with electron beams; (c) selectively scanning the objective pattern of the sample to be corrected with electron beams to correct by etching or deposition; and (d) continuously discharging the gas by a differential gas discharging device disposed on the objective lens so as to regulate the reactive gas supplied onto the surface irradiated with electron beams from flowing into the electron gun side.

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