摘要 |
<p>All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ "as-implanted" dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.</p> |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC.;WILLIAMS, RICHARD, K.;DISNEY, DONALD, RAY;CHEN, JUN-WEI;CHAN, WAI, TIEN;RYU, HYUNGSIK |
发明人 |
WILLIAMS, RICHARD, K.;DISNEY, DONALD, RAY;CHEN, JUN-WEI;CHAN, WAI, TIEN;RYU, HYUNGSIK |