| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a device size by forming an element isolation region with higher top part than a well pick-up region. CONSTITUTION: The trench is formed by etching a well pick-up area(X) of a semiconductor substrate(100). A buffer layer is formed within the trench. An element isolation region of the semiconductor substrate is etched low than the bottom surface of the trench. The trench and the element isolation region is filled with a insulating layer. A gate is formed on the insulating layer. A contact hole is formed by etching the insulating layer formed on the well pick-up area. A well pick-up contact(109) connected to the well pick-up area is formed by filling the contact hole with a conductive film.
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