| 摘要 |
PROBLEM TO BE SOLVED: To provide a carbon concentration measuring method of a silicon single crystal, which measures carbon concentration of a silicon single crystal by using a DLTS method.SOLUTION: An aggregation density D1 of three deep impurity levels E1 to E3 caused by a composite of a silicon crystal H-C or H-C-O is measured by a DLTS method from a first silicon crystal. A measured value of the aggregation density D1 is divided by a carbon density C1 of a first silicon crystal to provide an index value (D1/C1). A second silicon crystal is provided for measuring a carbon density C2 included in it. An aggregation density D2 of impurity levels E1 to E3 of the provided second silicon single crystal is measured, and the measured value is divided by the above index value (D1/C1) to calculate a carbon density C2 of a second silicon single crystal.SELECTED DRAWING: Figure 1 |
