| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a joined GaN crystal having a structure including a plurality of GaN single crystals arranged in two directions, and to especially provide the method advantageous for matching crystal orientations among the plurality of GaN single crystals.SOLUTION: A method for manufacturing a joined GaN crystal, comprises: (i) the crystal preparation step of preparing an original crystal including first GaN single crystals 11a and 11b, second GaN single crystals 12a and 12b and joined surfaces among the first GaN single crystals and the second GaN single crystals; (ii) the crystal splitting step of splitting the original crystal into a plurality of partial crystals 10a and 10b including a first partial crystal and a second partial crystal; and (iii) the crystal joining step of obtaining a secondary crystal 20 by joining the first partial crystals 10a and the second partial crystals 10b to arrange four GaN single crystal sections 11a, 11b, 12a and 12b in two directions. The surface of the secondary crystal 20 is processed into a flat surface, and the GaN crystal is used as a seed substrate for epitaxial growth.SELECTED DRAWING: Figure 5 |
