发明名称 |
Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors |
摘要 |
Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon. |
申请公布号 |
US9449810(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201514847350 |
申请日期 |
2015.09.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Canaperi Donald F.;Nguyen Son V.;Priyadarshini Deepika;Shobha Hosadurga K. |
分类号 |
H01L21/47;H01L21/02;H01B3/46;H01L23/532 |
主分类号 |
H01L21/47 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Meyers Steven |
主权项 |
1. An ultra-low dielectric (k) film comprising:
a covalently bonded network comprising atoms of silicon, oxygen, carbon, hydrogen, and a cyclotrisilane structure; and a plurality of pores having a pore size distribution (PSD) of less than about 2.0 nanometers (nm); wherein the ultra-low k film has a k value of less than about 2.7 and comprises about 35 to about 70 atomic % carbon and about 10 to about 40 atomic % silicon. |
地址 |
Armonk NY US |