发明名称 Method of depositing materials on substrates
摘要 <p>A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate (110) at a first pressure (202) for a first period of time (t1) and then depositing the material on the substrate at a second pressure (204) for a second period of time (t2). Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step. &lt;IMAGE&gt;</p>
申请公布号 EP1101834(A2) 申请公布日期 2001.05.23
申请号 EP20000310185 申请日期 2000.11.16
申请人 APPLIED MATERIALS, INC. 发明人 SUNDARRAJAN, ARVIND;ANGELO, DARRYL;DING, PEIJUN;CHIN, BARRY;HASHIM, IMRAN
分类号 C23C14/14;C23C14/06;C23C14/04;C23C14/34;C23C14/35;H01J37/32;H01J37/34;H01L21/203;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):C23C14/34 主分类号 C23C14/14
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