| 摘要 |
A metal-oxide-semiconductor (MOS) semiconductor device has a drain zone (3) of a first conductivity type, a source zone (4) spaced from the drain zone (5) by a body zone (3) of the other conductivity type, opposite to the first type, and of the first conductivity type, a drain electrode (10) contacting the drain zone (5), a source electrode (4) contacting the source zone and the body zone (3) and a gate electrode (8) arranged over the body zone. The gate electrode (8) is arranged behind the source electrode (9), as seen in the direction from the drain electrode (10) to the source electrode (9). |
