发明名称 METHOD FOR DEPOSITING ORGANOSICATE LAYER
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an organosilicate layer. SOLUTION: The organosilicate layer is formed by applying electric field to a gaseous mixture containing an organosilane compound and an oxygen- containing gas. The organosilicate layer can be applied to an integrated circuit production process. In one integrated circuit production process, the organosilicate layer is used as an intermetallic dielectric layer. In another integrated circuit production process, the organosilicate layer is incorporated into a damascene structure.
申请公布号 JP2002275631(A) 申请公布日期 2002.09.25
申请号 JP20010333118 申请日期 2001.10.30
申请人 APPLIED MATERIALS INC 发明人 GAILLARD FREDERIC;XIA LI-QUN;YIEH ELLIE;FISHER PAUL;NEMANI SRINIVAS D
分类号 C23C16/42;C23C16/40;H01L21/20;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C23C16/42 主分类号 C23C16/42
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