发明名称 FARADAY SYSTEM FOR ION IMPLANTERS
摘要 A Faraday system for measuring ion beam current in an ion implanter or other ion beam treatment system includes a Faraday cup body defining a chamber which has an entrance aperture for receiving an ion beam, a suppression electrode positioned in proximity to the entrance aperture to produce electric fields for inhibiting escape of electrons from the chamber, and a magnet assembly positioned to produce magnetic fields for inhibiting escape of electrons from the chamber. The chamber may have a relatively small ratio of chamber depth to entrance aperture width.
申请公布号 WO0223582(A3) 申请公布日期 2002.08.15
申请号 WO2001US28671 申请日期 2001.09.14
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BISSON, JACK;ZHAO, ZHIYONG;GAMMEL, GEORGE;ALVARADO, DANIEL;WALKER, CRAIG
分类号 C23C14/48;H01J37/04;H01J37/244;H01J37/317;H01L21/265 主分类号 C23C14/48
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