发明名称 |
METHOD OF MANUFACTURING A TRENCH-GATE SEMICONDUCTOR DEVICE AND CORRESPONDING DEVICE |
摘要 |
The manufacture of a trench-gate semiconductor device, for example a power transistor or a memory device includes the steps of forming at a surface (10a) of a semiconductor body (10) a first mask (51) having a first window (51a), providing a thin layer of a second material (52) in the first window (51a), forming an intermediate mask (53A, 53B) of a third material having curved sidewalls and using the intermediate mask (53A, 53B) to form two L-shaped parts (52A, 52D and 52B, 52E) of the second material with a second window (52a) which is used to etch a trench-gate trench (20). The rectangular base portion (52D, 52E) of each L-shaped part ensures that the trench (20) is maintained narrow during etching. Narrow trenches are advantageous for low specific on-resistance and low RC delay in low voltage cellular trench-gate power transistors. Narrow deep trenches are also advantageous for cell density in DRAM devices where a memory cell has a switching transistor cell surrounded by a trench-gate and a storage capacitor in a lower part of the same trench. |
申请公布号 |
WO0215254(A3) |
申请公布日期 |
2002.08.15 |
申请号 |
WO2001EP09330 |
申请日期 |
2001.08.09 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HUETING, RAYMOND, J., E.;HIJZEN, ERWIN, A.;IN 'T ZANDT, MICHAEL, A., A. |
分类号 |
H01L21/331;H01L21/336;H01L21/338;H01L21/8242;H01L27/108;H01L29/739;H01L29/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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