发明名称 ELECTRON BEAM EXPOSURE APPARATUS AND ELECTRON BEAM EXPOSING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron beam exposure apparatus effectually employing a mask substrate for use in electron beam exposure and capable of reducing costs required for the exposure in a semiconductor manufacturing process. <P>SOLUTION: The electron beam exposure apparatus comprises an electron beam source 14 for generating an electron beam 15; a mask 30 having a mask pattern in response to a pattern exposed to the surface of sample 40, a mask holder 31 for disposing and holding the mask 30 in a passage of the electron beam 15, and a scanning means 21 for deflecting the electron beam 15 such that the electron beam 15 scans the mask 30 thereon. The mask holder 31 holds the mask 30 variably in the relative position of the mask with respect to a scanning region of the electron beam 15 by the scanning means 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005236025(A) 申请公布日期 2005.09.02
申请号 JP20040043157 申请日期 2004.02.19
申请人 TOKYO SEIMITSU CO LTD;RIIPURU:KK 发明人 FUKUI TOYOJI;CHIBA KIYOTAKA;SHIMAZU NOBUO;ENDO AKIHIRO
分类号 G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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