| 摘要 |
A semiconductor light emitting device and a manufacturing method thereof are provided to improve light emitting efficiency by overlapping the patterns of an electrode layer to improve the reduction of a light emitting area. A light emitting structure(115) is formed on a substrate(110). The light emitting structure includes a first conductive semiconductor layer(120), an active layer(130) and a second conductive semiconductor layer(140). A transparent electrode layer(145) is formed on the light emitting structure. An insulating layer(150) is formed on the transparent electrode layer. The insulating layer is formed to insulate the first electrode layer and the second electrode layer. The second electrode layer with a polygon grating pattern including a square, a pentagon, and a hexagon is formed on the transparent electrode layer. At least one second pad is formed in a crossing potion of the grating pattern. The first electrode layer is formed on the insulating layer. The pattern of the first electrode layer and the pattern of the second electrode layer are partially overlapped. |
