| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a semiconductor device having a hierarchically bit line structure. <P>SOLUTION: Two memory cells MC(a) and MC(b) to be accessed at the same time are sensed in a time division manner using two sensing amplifiers SA0 and SA0A, and restored at the same time. No switch is required in the middle of global bit lines GBLT0 and GBLB0, and no problem occurs in time-division restoration. Further, as the sensing amplifier SA0 and the sensing amplifier SA0A have the same parasitic CR model, high sensitivity can be ensured. <P>COPYRIGHT: (C)2011,JPO&INPIT |
