| 发明名称 |
METHOD FOR LOCATING A WAFER IN THE INGOT OF SAME |
| 摘要 |
A method for determining the original position of a wafer in an ingot made from semiconductor material comprises the following steps: measuring the interstitial oxygen concentration in an area of the wafer; measuring the concentration of thermal donors formed in said area of the wafer during a previous solidification of the ingot; determining the effective time of a thermal donor formation anneal undergone by the wafer when solidification of the ingot took place, from the thermal donor concentration and the interstitial oxygen concentration; and determining the original position of the wafer in the ingot from the effective time. |
| 申请公布号 |
US2016187278(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201414909230 |
申请日期 |
2014.08.01 |
| 申请人 |
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
VEIRMAN Jordi;DUBOIS Sébastien |
| 分类号 |
G01N27/04;G01R31/26 |
主分类号 |
G01N27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for determining the original position of a wafer in an ingot made from semiconductor material, comprising the following steps:
measuring the interstitial oxygen concentration in one area of the wafer; measuring the concentration of thermal donors formed in said area of the wafer during a previous solidification of the ingot; determining the effective time of a thermal donor formation anneal undergone by the wafer when solidification of the ingot took place from the thermal donor concentration and the interstitial oxygen concentration; and determining the original position of the wafer in the ingot from the effective time. |
| 地址 |
Paris FR |
