RESISTIVE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A resistive memory device includes a memory cell array that has a plurality of resistive memory cells that are arranged respectively on regions where a plurality of first signal lines and a plurality of second signal lines cross each other. A write circuit is connected to a selected first signal line that is connected to a selected memory cell from among the plurality of memory cells, and provides pulses to the selected memory cell. A voltage detector detects a node voltage at a connection node between the selected first signal line and the write circuit. A voltage generation circuit generates a first inhibit voltage and a second inhibit voltage that are applied respectively to unselected first and second signal lines connected to unselected memory cells from among the plurality of memory cells, and changes a voltage level of the second inhibit voltage based on the node voltage that is detected.

主权项

1. A resistive memory device comprising:
a memory cell array comprising a plurality of resistive memory cells that are arranged respectively on regions where a plurality of first signal lines and a plurality of second signal lines cross each other; a write circuit connected to a selected first signal line that is connected to a selected memory cell from among the plurality of memory cells, and to provide pulses to the selected memory cell; a voltage detector to detect a node voltage at a connection node between the selected first signal line and the write circuit; and a voltage generation circuit to generate a first inhibit voltage and a second inhibit voltage that are applied respectively to unselected first and second signal lines connected to unselected memory cells from among the plurality of memory cells, and to change a voltage level of the second inhibit voltage based on the node voltage that is detected.