STATIC MEMORY CELL WITH TFET STORAGE ELEMENTS

摘要

In some embodiments, an apparatus for storing data includes a state retention circuit configured to retain a first state when placed into the first state and a second state when placed into the second state, a write port operably connected to the state retention circuit and configured to receive a data input and place the state retention circuit into a written state corresponding to the data input, a read port operably connected to the state retention circuit and configured to drive a data output according to the written state. In one embodiment, the write port and the read port comprise CMOS transistors and no tunneling field effect transistors, and the state retention circuit comprises tunneling field effect transistors and no CMOS transistors. A corresponding system and computer readable medium are also disclosed herein.

主权项

1. An apparatus for storing data, the apparatus comprising:
a state retention circuit configured to retain a first state when placed into the first state and a second state when placed into the second state; a write port operably connected to the state retention circuit and configured to receive a data input and place the state retention circuit into a written state corresponding to the data input; a read port operably connected to the state retention circuit and configured to drive a data output according to the written state; wherein the write port and the read port comprise CMOS transistors and no tunneling field effect transistors; and wherein the state retention circuit comprises tunneling field effect transistors and no CMOS transistors.