发明名称 Apparatus and Method for a Self-Biasing Circuit for a FET Passive Mixer
摘要 Embodiments are provided for biasing circuits with compensation of process variation without band-gap referenced current or voltage. In an embodiment, a circuit for biasing a field-effect transistor (FET) passive mixer comprises a series of diode-connected FETs, and a series of first resistors connected to a voltage source and the series of diode-connected FETs. Additionally, one or more second resistors are connected to the series of diode-connected FETs and to ground. In an embodiment method, the total number of the diode-connected FETs and the total number of the resistors, including the first and second series of resistors, are selected. The total number of the second resistors is then determined according to a defined relation between the selected total number of diode-connected FETs and the total number of resistors.
申请公布号 US2016308521(A1) 申请公布日期 2016.10.20
申请号 US201514689793 申请日期 2015.04.17
申请人 Futurewei Technologies, Inc. 发明人 Ro Yoonhyuk;Qiu Xuya
分类号 H03K17/16;H02M3/06 主分类号 H03K17/16
代理机构 代理人
主权项 1. A circuit for biasing an n-channel field-effect transistor (NFET) passive mixer, the circuit comprising: a series of diode-connected NFETs; a series of first resistors connected to a voltage source and the series of diode-connected NFETs; and one or more second resistors connected to the series of diode-connected NFETs and to ground.
地址 Plano TX US