| 摘要 |
PROBLEM TO BE SOLVED: To realize high performance, high functionality, high reliability, and long lifetime, in a surface emitting semiconductor light emitting element which has a current element layer formed by lateral oxidization. SOLUTION: The element includes a first semiconductor multilayer film mirror 6, a semiconductor active layer 4, and cladding layers 3 and 5 serve as a convex-shaped mesa part. A current constriction part 8 is formed by lateral oxidization of the top layer 2a of a semiconductor multilayer film mirror 2 and the bottom layer 6a of the semiconductor multilayer film mirror 6 from their sides toward the light emitting region 17. These semiconductor multilayer film mirrors 2 and 6 have oxidization anisotropy with a first direction which is easily oxidized to the crystal orientation and a second direction which is not easily oxidized. Distance from the light emitting region to the current constriction part along the first direction is longer than that along the second direction. COPYRIGHT: (C)2007,JPO&INPIT
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