发明名称 Substrate processing apparatus, method for manufacturing semiconductor device and computer-readable recording medium
摘要 A substrate processing apparatus includes: a substrate mounting table on which a substrate is mounted; an inert gas supply part configured to supply an inert gas on a surface of the substrate from an upper side of the substrate mounting table at a lateral side of the processing gas supply part; and a plurality of gas exhaust parts configured to exhaust a gas supplied on the surface of the substrate to an upper side, between the processing gas supply part and the inert gas supply part.
申请公布号 US9365928(B2) 申请公布日期 2016.06.14
申请号 US201514680587 申请日期 2015.04.07
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 Saido Shuhei;Wada Yuichi;Sasaki Takafumi
分类号 C23C16/44;H01L21/677;C23C16/455;C23C16/458 主分类号 C23C16/44
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A substrate processing apparatus, comprising: a substrate mounting table on which a substrate is mounted; a processing gas supply part configured to supply a processing gas on a surface of the substrate from an upper side of the substrate mounting table; an inert gas supply part configured to supply an inert gas on the surface of the substrate from an upper side of the substrate mounting table at a lateral side of the processing gas supply part, and configured so that a lower surface of the inert gas supply part is more closely to the substrate than a lower surface of the processing gas supply part; and a plurality of gas exhaust parts configured to exhaust the gas supplied on the surface of the substrate to an upper side of the substrate, between the processing gas supply part and the inert gas supply part.
地址 Tokyo JP