Precursors and methods for atomic layer deposition of transition metal oxides

摘要

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

主权项

1. A method for forming a zirconium oxide thin film on a substrate comprising:
alternately and sequentially contacting the substrate with a vapor phase first zirconium reactant and a vapor phase second oxygen reactant until a thin zirconium oxide film of a desired thickness and composition is obtained, wherein the first zirconium reactant comprises at least one ligand comprising a C7 ring structure.