发明名称 Vapor deposition device and vapor deposition method
摘要 The vapor deposition device includes a plurality of vapor deposition masks whose lengths in Y axis and X axis directions are shorter than those of a film formation target substrate. Vapor deposition masks adjacent to each other in the Y axis direction is positionally displaced in the X axis direction. In an overlapping area in which mask opening group areas adjacent to each other in the Y axis direction overlap with each other in the X axis direction, opening lengths in the Y axis direction become shorter toward the outer side of each of the mask opening group areas in the plan view.
申请公布号 US9365923(B2) 申请公布日期 2016.06.14
申请号 US201414765557 申请日期 2014.01.28
申请人 SHARP KABUSHIKI KAISHA 发明人 Ochi Takashi;Kawato Shinichi;Kobayashi Yuhki;Niboshi Manabu;Inoue Satoshi;Tsukamoto Yuto;Kikuchi Katsuhiro;Ichihara Masahiro;Matsumoto Eiichi
分类号 H01L21/027;C23C16/04;H01L51/00;C23C14/04;C23C14/12;H01L51/50 主分类号 H01L21/027
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A vapor deposition device for forming vapor-deposited films on a film formation target substrate for use in a display device, the vapor-deposited films being formed for respective sub-pixels of the display device in a predetermined pattern, said vapor deposition device comprising: a vapor deposition unit having a vapor deposition source and a plurality of vapor deposition masks; and a moving device for moving one of the vapor deposition unit and the film formation target substrate relatively to the other, a length of each of the plurality of vapor deposition masks in a first direction being shorter than a length of a vapor deposition area of the film formation target substrate in the first direction, and a length of each of the plurality of vapor deposition masks in a second direction being shorter than a length of the vapor deposition area in the second direction, the first direction being a moving direction by the moving device, and the second direction being perpendicular to the first direction, the plurality of vapor deposition masks are arranged so that two or more of the plurality of vapor deposition masks are arranged in the first direction and at least one of the plurality of vapor deposition masks is arranged in the second direction, each of the plurality of vapor deposition masks having one or more mask opening group areas which are arranged in the second direction via a shielding area corresponding to at least one pixel, each of the one or more mask opening group areas (i) including a plurality of mask openings which are arranged at least in the second direction and (ii) pairing up with an injection hole of the vapor deposition source, vapor deposition particles being injected from the injection hole, the two or more vapor deposition masks adjacent to each other in the first direction being out of alignment in the second direction such that, (i) when viewed along the first direction, mask openings in a first end part of each of one or more mask opening group areas of one of the two or more vapor deposition masks overlap, in the second direction, with mask openings in a second end part of each of one or more mask opening group areas of another one of the two or more vapor deposition masks which is adjacent to the one of the two or more vapor deposition masks, the first end part and the second end part being respective two end parts of each of one or more mask opening group areas in the second direction, and (ii) a vapor-deposited film formed via mask openings in the first end part and in the second end part which are adjacent to each other in the first direction extends on one straight line in the first direction, a total length of the at least one of the plurality of vapor deposition masks arranged in the second direction being longer than the length of the vapor deposition area in the second direction, the mask openings being provided for the respective sub-pixels, in each of the first end part and the second end part which overlap with each other in the second direction when viewed along the first direction, the mask openings being formed to have, in the first direction, opening lengths which become shorter toward an outer side of the each of one or more mask opening group areas when viewed in a normal direction which is normal to a principal surface of each of the plurality of vapor deposition masks.
地址 Osaka-Shi JP