| 摘要 |
A semiconductor device includes a first metal layer, a second metal layer, a first through-via and a second through-via. The first metal layer includes a unit pad. The second metal layer includes a first and a second unit pad. One end of the first through-via is connected to the first unit pad of the first metal layer, and the other end of the first through-via is connected to a first bump. One end of the second through-via is connected to the first unit pad of the second metal layer, and the other end of the second through-via is connected to a second bump. The second unit pad of the second metal layer is located at a first direction from the first unit pad of the second metal layer, and is electrically connected to the first unit pad of the second metal layer. The present invention facilitates to form an independent signal path per channel, without increasing manufacturing costs of a chip. |
