| 摘要 |
PROBLEM TO BE SOLVED: To provide a semi-polar group III nitride optoelectronic device on an M-plane substrate with miscuts less than +/-15 degrees in a C-direction.SOLUTION: An optoelectronic device is an optoelectronic device which is grown on a miscut of GaN, the miscut including a semi-polar GaN crystal plane of (GaN) miscut x degrees from an m-plane of the GaN in a c-direction of the GaN, where -15<x<-1 and 1<x<15 are satisfied. The semi-polar crystal plane is a {30-31} plane, a {30-3-1} plane, a {40-41} plane or a {40-4-1} plane. The semi-polar crystal plane is a top surface of a vicinal, miscut, or off-axis free standing GaN substrate.SELECTED DRAWING: Figure 2 |
