| 摘要 |
The invention relates to a thermoelectric sensor (10) for measuring thermoelectric voltages, comprising an irradiation side (O) and an assembly side (U). The sensor comprises a plurality of thermoelements with measurement transitions (M) which are formed by the transition of a first metal layer (1) and a second metal layer (2) into another metal layer, and the two metal layers (1, 2) sandwich an electrically insulating matrix layer (3). The thermoelectric sensor is to be producible in a simple and inexpensive manner and should be robustly protected against laser beams. This is achieved in that a plurality of first and second blind holes (4, 4') are arranged so as to completely cross the second metal layer (2) and the matrix layer (3) from the assembly side (U). The inner walls (40) of the first blind holes (4) are covered by a third metal layer (5) and a fourth metal layer (6), and the inner walls (40') of the second blind holes (4') are covered by the fourth metal layer (6), thus forming a thermoelectric sensor (10) with a body which is closed towards the irradiation side (O). |
