| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a structure to electrically insulate active or passive elements formed on a semiconductor chip.SOLUTION: An insulating region for a semiconductor substrate 301 includes a trench 310 filled with a dielectric substance, and a field oxide region 306. A protective cap formed of dielectric material dissimilar from dielectric material in a main portion of the trench and the field oxide region is used, to protect a structure from erosion during later processing steps. An upper surface of an insulation structure is coplanar with a surface of the substrate. A field doping region may be formed beneath the field oxide region. To meet a request of different elements, the insulation structures have different width and depth.SELECTED DRAWING: Figure 8J |
