| 摘要 |
The present invention relates to a power semiconductor device, and is provided with: a first conductivity-type silicon carbide semiconductor layer; a switching device formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region, which is formed in a terminal portion of a switching device forming region, and which relaxes an electric field of the terminal portion; and a first conductivity-type added region, which is provided between second conductivity-type well regions of a plurality of unit cells constituting the switching device, and at least on the outer side of the electric field relaxation impurity region, and which has an impurity concentration higher than that of the silicon carbide semiconductor layer. |
