METAL SUBSTRATE WITH INSULATED VIAS

摘要

A metal substrate with insulated vias (MSIV) has a metallic layer with through-holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through-hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices.

主权项

1: A metal substrate with insulated vias (MSIV), comprising:
a metallic layer having a through-hole defined through a thickness of the metallic layer between a first surface and a second surface of the metallic layer; a dielectric layer formed at least in part by oxidation of the metallic layer, the dielectric layer being formed as a continuous layer on at least one of the first surface and the second surface of the metallic layer, and on internal walls of the through-hole; a conductive metallic via extending through the through-hole defined in the metallic layer, the conductive metallic via being electrically insulated from the metallic layer by the dielectric layer; and an electrical circuit formed on a portion of the dielectric layer, the electrical circuit being in electrical contact or thermal contact or both electrical and thermal contact with the conductive metallic via, wherein the dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK, and wherein at least a portion of the dielectric nanoceramic layer is impregnated with organic or non-organic material.