发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD |
摘要 |
A semiconductor device production method includes preparing a first structure having a first planar semiconductor layer, and a first columnar semiconductor layer on the first planar semiconductor layer. A first high concentration semiconductor layer is formed in a lower region of the first columnar semiconductor layer and in a region of the first planar semiconductor layer below the first columnar semiconductor layer. An insulating layer, a metal film, and a semiconductor film are sequentially formed on the first structure, and the semiconductor film, the metal film, and the insulating layer are sequentially etched with each leaving a sidewall shape on the sidewall on the first columnar semiconductor layer following etching. Another semiconductor film is then formed on the sidewall shape after etching the insulating film. |
申请公布号 |
US2016308013(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201615191853 |
申请日期 |
2016.06.24 |
申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki;ARAI Shintaro;KUDO Tomohiko;CHUI King-Jien;LI Yisuo;JIANG Yu;LI Xiang;CHEN Zhixian;SHEN Nansheng;BLIZNETSOV Vladimir;BUDDHARAJU Kavitha Devi;SINGH Navab |
分类号 |
H01L29/423;H01L27/092;H01L21/265;H01L21/8238;H01L29/786;H01L29/66 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Peninsula Plaza SG |