SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.

主权项

1. A semiconductor device comprising:
a substrate having a fin-type active region; a gate insulating layer that covers at least a portion of an upper surface and side portions of the fin-type active region; and a gate line that extends and intersects the fin-type active region while covering at least the portion of the upper surface and the side portions of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.