| 发明名称 |
IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms. |
| 申请公布号 |
US2016307952(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201514689838 |
申请日期 |
2015.04.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
HUANG CHIH-CHANG;LU CHI-MING;CHEN JIAN-MING;TSAO JUNG-CHIH;LIANG YAO-HSIANG |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A back side illuminated (BSI) image sensor, comprising:
a semiconductive substrate; and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate, and the ILD layer comprising:
a dielectric layer over the semiconductive substrate; anda contact partially buried inside the semiconductive substrate, and the contact comprising:
a silicide layer comprising a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms. |
| 地址 |
HSINCHU TW |
