| 摘要 |
PROBLEM TO BE SOLVED: To provide an easily manufactured semiconductor light-emitting element of a III group nitride material group with superior controllability of etching depth. SOLUTION: On a sapphire substrate 101, a GaN buffer layer 102, an (n)-type GaN contact layer 103, an (n)-type Al0.15 Ga0.85 N clad layer 104, an In0.05 Ga0.95 N active layer 105, a (p)-type In0.07 Ga0.6 Al0.33 N etching stop layer 106, a (p)-type Al0.15 Ga0.85 N clad layer 107 and a (p)-type GaN contact layer 108 are successively laminated. Also, a (p) side electrode 109 is formed on the (p)-type GaN contact layer 108 and an (n) side electrode 110 is formed on the (n)-type GaN contact layer 103. |
